GaN-Based HEMT-Type VUV Phototransistors With Superior Triple-Mode Photodetection

作者：Fangzhou Liang, Haochen Zhang, Siqi Zhu, Lei Yang, Zhe Huang, Kun Liang, Zhanyong Xing, Hu Wang, Mingshuo Zhang, Jiayao Li, Yankai Ye, Haiding Sun · 发表于：IEEE Electron Device Letters · 年份：2024 · DOI：10.1109/led.2024.3381838 · 被引用次数：20 · 研究领域：GaN-based semiconductor devices and materials、Ga2O3 and related materials、Photocathodes and Microchannel Plates

In this work, a superior vacuum UV phototransistor (VUV PT) in the form of GaN-based HEMT architecture is demonstrated. With tunable gate/drain bias (VGS/VDS), the HEMT-type VUV PT is switchable among three detection modes including photoconduction (–5/10 V), photovoltaics (±0.05/0 V), and self-powering (0/0 V). Strikingly, the device demonstrates record-high responsivity and detectivity under all the operation modes thanks to structural advantages in AlGaN/GaN heterojunction, including the shallow active region, unique band inclinations, and stable surface conditions. Our work highlights the great abilities of GaN-based HEMT as a promising platform to build multi-functional photoelectric systems.