Lei Yang

机构：Academy of Opto-Electronics, University of Chinese Academy of Sciences

发表论文 21 篇 · 总被引 479 次 · h-index 11

代表论文

• Demonstration of AlGaN/GaN-based ultraviolet phototransistor with a record high responsivity over 3.6 × 107 A/W (2021 · Applied Physics Letters · 被引 176)
• Temperature-dependent photodetection behavior of AlGaN/GaN-based ultraviolet phototransistors (2022 · Applied Physics Letters · 被引 79)
• Correlation Between Electrical Performance and Gate Width of GaN-Based HEMTs (2022 · IEEE Electron Device Letters · 被引 30)
• Boosted high-temperature electrical characteristics of AlGaN/GaN HEMTs with rationally designed compositionally graded AlGaN back barriers (2023 · Science China Information Sciences · 被引 29)
• Demonstration of AlGaN/GaN HEMTs on vicinal sapphire substrates with large misoriented angles (2021 · Applied Physics Letters · 被引 23)
• Event-driven retinomorphic photodiode with bio-plausible temporal dynamics (2025 · Nature Nanotechnology · 被引 22)