Boosted high-temperature electrical characteristics of AlGaN/GaN HEMTs with rationally designed compositionally graded AlGaN back barriers

作者：Haochen Zhang, Yue Sun, Kunpeng Hu, Lei Yang, Kun Liang, Zhanyong Xing, Hu Wang, Mingshuo Zhang, Huabin Yu, Shi Fang, Kang Yang, Haiding Sun · 发表于：Science China Information Sciences · 年份：2023 · DOI：10.1007/s11432-022-3694-4 · 被引用次数：29 · 研究领域：GaN-based semiconductor devices and materials、Semiconductor materials and devices、Ga2O3 and related materials