Hu Wang

机构：University of Science and Technology of China, Dynavax Technologies (Germany) · ORCID：0009-0003-3075-8349

发表论文 8 篇 · 总被引 123 次 · h-index 7

代表论文

• Boosted high-temperature electrical characteristics of AlGaN/GaN HEMTs with rationally designed compositionally graded AlGaN back barriers (2023 · Science China Information Sciences · 被引 29)
• 2DEG-Concentration-Modulated High-Power-Density AlGaN/GaN RF HEMTs (2024 · IEEE Electron Device Letters · 被引 21)
• GaN-Based HEMT-Type VUV Phototransistors With Superior Triple-Mode Photodetection (2024 · IEEE Electron Device Letters · 被引 20)
• Effect of in-situ SiNx grown with different carrier gas on structural and electrical properties of GaN-based MISHEMTs (2023 · Applied Physics Letters · 被引 19)
• Thick-AlN-barrier AlN/GaN-based HEMTs with superior power and noise performance for low-voltage RF front-end applications (2025 · Applied Physics Letters · 被引 10)
• Room-Temperature Organic Passivation for GaN-on-Si HEMTs With Improved Device Stability (2023 · IEEE Transactions on Electron Devices · 被引 9)