2DEG-Concentration-Modulated High-Power-Density AlGaN/GaN RF HEMTs

作者：Haochen Zhang, Hu Wang, Mingshuo Zhang, Lei Yang, Yankai Ye, Hongtu Qian, Xinchuan Zhang, Chengjie Zuo, Yansong Yang, Yi Pei, Haiding Sun · 发表于：IEEE Electron Device Letters · 年份：2024 · DOI：10.1109/led.2024.3402310 · 被引用次数：21 · 研究领域：GaN-based semiconductor devices and materials、Ga2O3 and related materials、Radio Frequency Integrated Circuit Design

Herein, by modulating 2DEG concentration (ns), a superior GaN RF HEMT with a high-Al-content AlGaN barrier is reported for high power-density (Pout) X-band applications. Thanks to a highnsof 1.3×1013cm-2enabled by the Al0.32Ga0.68N barrier, as well as the regrown n+-GaN ohmic contacts, the device exhibits an output drain current (ID) of 1.6 A/mm, an on-resistance (RON) of 1.10 Ω·mm, and maintain a breakdown electric field (EBC) of ~0.8 MV/cm. As a result, at 10 GHz,Poutof 10.4 W/mm and power-added efficiency (PAE) of 63.2% are obtained at a moderate drain bias (VD) of 28 V. Notably, the results ofID–EBC,Pout–VD, and the figure-of-meritPout/VDof our device marks one of the best records among X-band GaN HEMTs, showing strong competitiveness of high-Al-content AlGaN/GaN HEMTs for high-PoutRF applications.