Yi Pei

机构：ON Semiconductor (China), Dynavax Technologies (Germany), Nanopolis Suzhou (China), Hubei University of Technology · ORCID：0000-0003-0906-1056

发表论文 71 篇 · 总被引 1491 次 · h-index 22

代表论文

• Direct observation of 0.57eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors (2012 · Solid-State Electronics · 被引 61)
• Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy (2013 · Applied Physics Letters · 被引 54)
• 2DEG-Concentration-Modulated High-Power-Density AlGaN/GaN RF HEMTs (2024 · IEEE Electron Device Letters · 被引 21)
• Accurate Temperature Estimation for Each Gate of GaN HEMT With n-Gate Fingers (2020 · IEEE Transactions on Electron Devices · 被引 20)
• Dislocation-assisted electron and hole transport in GaN epitaxial layers (2025 · Nature Communications · 被引 19)
• Accurate Modeling of GaN HEMTs and MMICs for Cryogenic Electronics Applications Utilizing Artificial Neural Network (2024 · IEEE Journal of Emerging and Selected Topics in Power Electronics · 被引 11)