Mingshuo Zhang

机构：University of Science and Technology of China, Anhui Polytechnic University, Beihang University · ORCID：0009-0001-2821-0689

发表论文 23 篇 · 总被引 158 次 · h-index 8

代表论文

• Boosted high-temperature electrical characteristics of AlGaN/GaN HEMTs with rationally designed compositionally graded AlGaN back barriers (2023 · Science China Information Sciences · 被引 29)
• 2DEG-Concentration-Modulated High-Power-Density AlGaN/GaN RF HEMTs (2024 · IEEE Electron Device Letters · 被引 21)
• GaN-Based HEMT-Type VUV Phototransistors With Superior Triple-Mode Photodetection (2024 · IEEE Electron Device Letters · 被引 20)
• Effect of in-situ SiNx grown with different carrier gas on structural and electrical properties of GaN-based MISHEMTs (2023 · Applied Physics Letters · 被引 19)
• Nitrogen-doped mesoporous carbon for high-performance zinc-iodine batteries (2024 · Journal of Electroanalytical Chemistry · 被引 11)
• Accurate Modeling of GaN HEMTs and MMICs for Cryogenic Electronics Applications Utilizing Artificial Neural Network (2024 · IEEE Journal of Emerging and Selected Topics in Power Electronics · 被引 11)