Zhanyong Xing

机构：University of Science and Technology of China · ORCID：0009-0000-4368-7816

发表论文 12 篇 · 总被引 303 次 · h-index 8

代表论文

• Enhanced light extraction of the deep-ultraviolet micro-LED via rational design of chip sidewall (2021 · Optics Letters · 被引 94)
• Temperature-dependent photodetection behavior of AlGaN/GaN-based ultraviolet phototransistors (2022 · Applied Physics Letters · 被引 79)
• Correlation Between Electrical Performance and Gate Width of GaN-Based HEMTs (2022 · IEEE Electron Device Letters · 被引 30)
• Boosted high-temperature electrical characteristics of AlGaN/GaN HEMTs with rationally designed compositionally graded AlGaN back barriers (2023 · Science China Information Sciences · 被引 29)
• GaN-Based HEMT-Type VUV Phototransistors With Superior Triple-Mode Photodetection (2024 · IEEE Electron Device Letters · 被引 20)
• Effect of in-situ SiNx grown with different carrier gas on structural and electrical properties of GaN-based MISHEMTs (2023 · Applied Physics Letters · 被引 19)