Zhe Huang

机构：Beijing Microelectronics Technology Institute · ORCID：0009-0007-1383-6121

发表论文 11 篇 · 总被引 159 次 · h-index 6

代表论文

• High Performance of Zero-Power-Consumption MOCVD-Grown β-Ga2O3-Based Solar-Blind Photodetectors with Ultralow Dark Current and High-Temperature Functionalities (2022 · ACS Applied Materials & Interfaces · 被引 89)
• GaN-Based HEMT-Type VUV Phototransistors With Superior Triple-Mode Photodetection (2024 · IEEE Electron Device Letters · 被引 20)
• Effect of in-situ SiNx grown with different carrier gas on structural and electrical properties of GaN-based MISHEMTs (2023 · Applied Physics Letters · 被引 19)
• Room-Temperature Organic Passivation for GaN-on-Si HEMTs With Improved Device Stability (2023 · IEEE Transactions on Electron Devices · 被引 9)
• Structural and Electrical Characteristics of GaN HEMTs With In Situ SiN x Gate Dielectrics Grown by Rationally Modulated N2/H2 Carrier Gas (2024 · IEEE Transactions on Electron Devices · 被引 8)
• GaN-based E-mode p-FETs with polarization-doped p-type graded AlGaN channels (2024 · Journal of Physics D Applied Physics · 被引 7)