首页 › 期刊 › 工程技术 › IEEE Transactions on Device and Materials Reliability
IEEE Transactions on Device and Materials Reliability
出版商:Institute of Electrical and Electronics Engineers · ISSN:1530-4388, 1558-2574 · 国家/地区:US · 类型:journal · 官网:http://ieeexplore.ieee.org/servlet/opac?punumber=7298
研究主题:Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design · Integrated Circuits and Semiconductor Failure Analysis · Electronic Packaging and Soldering Technologies · Ferroelectric and Negative Capacitance Devices
核心指标
- 影响因子(JCR 2025):2.700
- JCR 分区:Q3(ENGINEERING, ELECTRICAL & ELECTRONIC)
- 中科院分区(2025):工程技术 3区;小类:ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气 3区
- 新锐分区(2026):工程技术 3区
- SJR:0.451(Q2)
- h-index:89
- i10 指数:1081
- 近两年篇均被引:1.87
- 载文量 2800 · 总被引 48296
逐年趋势
- 近年影响因子:2021 1.89 → 2022 2 → 2023 2.5 → 2024 2.3 → 2025 2.7
- 近年 SJR:2021 0.458(Q2) → 2022 0.401(Q2) → 2023 0.436(Q2) → 2024 0.533(Q2) → 2025 0.451(Q2)
投稿参考
- 投稿人评价:3.0 分(2 条评价)
- 版面费(APC)约 $2645 USD(以期刊官网为准)
- 提供 LaTeX 投稿模板(IEEEtran.cls)
- 提供投稿指南
同学科期刊推荐
- Progress in Energy and Combustion Science — IF 41.3 · JCR Q1 · 中科院1区(Top)
- Nature Electronics — IF 40.9 · JCR Q1 · 中科院1区(Top)
- Annual Review of Fluid Mechanics — IF 26.1 · JCR Q1 · 中科院1区(Top)
- Progress in Aerospace Sciences — IF 24.2 · JCR Q1 · 中科院1区(Top)
- International Journal of Machine Tools and Manufacture — IF 24.1 · JCR Q1 · 中科院1区(Top)
- International Journal of Extreme Manufacturing — IF 21.3 · JCR Q1 · 中科院1区(Top)
- Applied Mechanics Reviews — IF 19.1 · JCR Q1 · 中科院1区(Top)
- Renewable and Sustainable Energy Reviews — IF 18.0 · JCR Q1 · 中科院1区(Top)
常见问题
《IEEE Transactions on Device and Materials Reliability》的影响因子是多少?
根据 JCR 2025 年数据,《IEEE Transactions on Device and Materials Reliability》的最新影响因子(IF)为 2.700。
《IEEE Transactions on Device and Materials Reliability》是几区期刊?
《IEEE Transactions on Device and Materials Reliability》中科院分区(2025年版)为工程技术3区,JCR 分区为 Q3。
《IEEE Transactions on Device and Materials Reliability》的版面费(APC)是多少?
根据 OpenAlex 收录的价目,《IEEE Transactions on Device and Materials Reliability》的文章处理费(APC)约为 $2645 美元。实际费用与豁免政策请以期刊官网为准。
本刊近期代表论文
- Compact Modeling of Process Variation and Reliability Predictions for Nanosheet Gate-All-Around FET (2025 · 被引 1)
- Analysis of Thermal Expansion Behavior and Interface Evolution of TSV Under Thermal Cycle Loading Based on Crystal Plastic Finite Element Method (2024 · 被引 7)
- Study on Characteristics and UIS of Hexagonal Planar SiC VDMOSFETs With Varied JFET Width (2024 · 被引 7)
- Dimension Influence on the Interface Fatigue Characteristics of Three-Dimensional TSV Array: A Fully Coupled Thermal-Electrical-Structural Analysis (2024 · 被引 6)
- Evaluations of Gate Oxide Reliability in SiC MOSFETs Under Extremely High Gate Voltage Stress (2024 · 被引 6)
- 4H-SiC Trench Gate Lateral MOSFET With Dual Source Trenches for Improved Performance and Reliability (2022 · 被引 10)