C. Slawinski

机构：Texas Instruments (United States)

发表论文 5 篇 · 总被引 63 次 · h-index 4

代表论文

• Microstructural characterization of nitrogen-implanted silicon-on-insulator (1987 · Journal of Applied Physics · 被引 35)
• Defect generation in trench isolation (1984 · 被引 10)
• The effect of post-oxygen-implant annealing temperature on the channel mobilities of CMOS devices in oxygen-implanted silicon-on-insulator structures (1987 · IEEE Electron Device Letters · 被引 9)
• IIB-1 1.25-µm buried-oxide SOI/CMOS process for 16K/64K SRAMS (1986 · IEEE Transactions on Electron Devices · 被引 7)
• The Physical and Electrical Properties of Buried Nitride Soi Structures Synthesized By Nitrogen Ion Implantation (1985 · MRS Proceedings · 被引 2)