IIB-1 1.25-µm buried-oxide SOI/CMOS process for 16K/64K SRAMS

作者：Changxin Chen, M. Matloubian, B.-Y. Mao, R. Sundaresan, C. Slawinski, Hon Wai Lam, T.G.W. Blake, L.R. Hite, R.K. Hester · 发表于：IEEE Transactions on Electron Devices · 年份：1986 · DOI：10.1109/t-ed.1986.22763 · 被引用次数：7 · 研究领域：Integrated Circuits and Semiconductor Failure Analysis、Semiconductor materials and devices、Advancements in Semiconductor Devices and Circuit Design