B.-Y. Mao

机构：North China Electric Power University · ORCID：0009-0003-3497-548X

发表论文 30 篇 · 总被引 622 次 · h-index 13

代表论文

• Single-transistor latch in SOI MOSFETs (1988 · IEEE Electron Device Letters · 被引 197)
• Microstructure of high-temperature annealed buried oxide silicon-on-insulator (1986 · Applied Physics Letters · 被引 73)
• Total Dose Hardening of Buried Insulator in Implanted Silicon-on-Insulator Structures (1987 · IEEE Transactions on Nuclear Science · 被引 38)
• Microstructural characterization of nitrogen-implanted silicon-on-insulator (1987 · Journal of Applied Physics · 被引 35)
• Modeling of the subthreshold characteristics of SOI MOSFETs with floating body (1990 · IEEE Transactions on Electron Devices · 被引 31)
• Total Dose Characterizations of CMOS Devices in Oxygen Implanted Silicon-on-Insulator (1986 · IEEE Transactions on Nuclear Science · 被引 28)