Single-transistor latch in SOI MOSFETs

作者：C.-D. Chen, M. Matloubian, R. Sundaresan, B.-Y. Mao, C.C. Wei, G. Pollack · 发表于：IEEE Electron Device Letters · 年份：1988 · DOI：10.1109/55.20420 · 被引用次数：197 · 研究领域：Semiconductor materials and devices、Advancements in Semiconductor Devices and Circuit Design、Silicon Carbide Semiconductor Technologies

A single-transistor latch phenomenon observed in silicon-on-insulator (SOI) MOSFETs is reported. This latch effect, which occurs at high drain biases, is an extreme case of floating-body effects which are present in SOI MOSFETs. The floating body results in positive feedback between the impact ionization current, body-to-source diode forward bias, and transistor currents. At large drain voltages, this positive feedback can maintain a high-drain-to-source current even when the MOS gate is biased well below its threshold voltage.>