Total Dose Hardening of Buried Insulator in Implanted Silicon-on-Insulator Structures

作者：B.-Y. Mao, Cheng-Eng Chen, G. Pollack, H.L. Hughes, G. E. Davis · 发表于：IEEE Transactions on Nuclear Science · 年份：1987 · DOI：10.1109/tns.1987.4337538 · 被引用次数：38 · 研究领域：Semiconductor materials and devices、Integrated Circuits and Semiconductor Failure Analysis、Silicon and Solar Cell Technologies

Total dose characteristics of the buried insulator in implanted silicon-on-insulator (SOI) substrates have been studied using MOS transistors. The threshold voltage shift of the parasitic back channel transistor, which is controlled by charge trapping in the buried insulator, is reduced by lowering the oxygen dose as well as by an additional nitrogen implant, without degrading the front channel transistor characteristics. The improvements in the radiation characteristics of the buried insulator are attributed to the decrease in the buried oxide thickness or to the presence of the interfacial oxynitride layer formed by the oxygen and nitrogen implants.