Cheng-Eng Chen

机构：Texas Instruments (United States)

发表论文 2 篇 · 总被引 47 次 · h-index 2

代表论文

• Total Dose Hardening of Buried Insulator in Implanted Silicon-on-Insulator Structures (1987 · IEEE Transactions on Nuclear Science · 被引 38)
• The effect of post-oxygen-implant annealing temperature on the channel mobilities of CMOS devices in oxygen-implanted silicon-on-insulator structures (1987 · IEEE Electron Device Letters · 被引 9)