The effect of post-oxygen-implant annealing temperature on the channel mobilities of CMOS devices in oxygen-implanted silicon-on-insulator structures

作者：B.-Y. Mao, M. Matloubian, Cheng-Eng Chen, R. Sundaresan, C. Slawinski · 发表于：IEEE Electron Device Letters · 年份：1987 · DOI：10.1109/edl.1987.26640 · 被引用次数：9 · 研究领域：Semiconductor materials and devices、Advancements in Semiconductor Devices and Circuit Design、Silicon and Solar Cell Technologies

The effects of post-oxygen-implant annealing temperature on the characteristics of MOSFET's in oxygen-implanted silicon-on-insulator (SOI) substrates are studied. The results show significant improvements in the electron and hole mobilities near the silicon/buried-oxide interface and in the electron mobility of the front-gate n-channel transistors in SOI substrates with higher post-oxygen-implant annealing temperature. The improvements in the transistor characteristics hence are attributed to the annihilation of oxygen precipitates and the reduction of defect density in the residual silicon film. By comparing the ring oscillators fabricated in SOI substrates annealed at 1150°C and 1250°C after oxygen implantation, a speed improvement of 15 percent is observed in substrates annealed at higher temperature.