The Physical and Electrical Properties of Buried Nitride Soi Structures Synthesized By Nitrogen Ion Implantation

作者：C. Slawinski, B.-Y. Mao, P.‐H. Chang, Hon Wai Lam, J. A. Keenan · 发表于：MRS Proceedings · 年份：1985 · DOI：10.1557/proc-53-269 · 被引用次数：2 · 研究领域：Metal and Thin Film Mechanics、Ion-surface interactions and analysis、Diamond and Carbon-based Materials Research