Dominique Adams

机构：Intel (United States)

发表论文 8 篇 · 总被引 182 次 · h-index 4

代表论文

• Advancing 2D Monolayer CMOS Through Contact, Channel and Interface Engineering (2021 · 被引 116)
• 300 mm MOCVD 2D CMOS Materials for More (Than) Moore Scaling (2022 · 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 被引 36)
• Low-voltage and high-speed switching of a magnetoelectric element for energy efficient compute (2022 · 2022 International Electron Devices Meeting (IEDM) · 被引 15)
• Ultra-High- k Ferroelectric BaTiO 3 Perovskite in the Gate Stack for Two-Dimensional WSe 2 p-Type High-Performance Transistors (2024 · Nano Letters · 被引 11)
• Magnetization switching and detection by PtxSn1−x alloys (2025 · Applied Physics Reviews · 被引 2)
• Unconventional spin-to-charge conversion in MnPd3 (2025 · Applied Physics Letters · 被引 2)