Low-voltage and high-speed switching of a magnetoelectric element for energy efficient compute

作者：Punyashloka Debashis, John J. Plombon, Chia‐Ching Lin, Yu-Ching Liao, Hai Li, Dmitri E. Nikonov, Dominique Adams, Carly Rogan, Mahendra DC, M. Radosavljević, Scott B. Clendenning, Ian A. Young · 发表于：2022 International Electron Devices Meeting (IEDM) · 年份：2022 · DOI：10.1109/iedm45625.2022.10019505 · 被引用次数：15 · 研究领域：Multiferroics and related materials、Ferroelectric and Piezoelectric Materials、Underwater Vehicles and Communication Systems

150 mV voltage-driven switching of a ferromagnet (FM) exchange-coupled to 6-nm-thick lanthanum-doped BiFeO3(LBFO) was demonstrated at room temperature (RT). Further, less than 2 ns 0%-90% switching of LBFO ferroelectric polarization was demonstrated through real-time oscilloscope measurements. These two results are respectively the lowest voltage magnetoelectric switching and the highest switching speed measured in LBFO, enabled by high quality epitaxial growth of ultra-thin LBFO/FM films. These results are key accomplishments for energy efficient computing as has been shown through circuit-level simulations of the magnetoelectric random access memory (ME-RAM) utilizing compact models calibrated to the experiments in this work.