Magnetization switching and detection by PtxSn1−x alloys

作者：Mahendra DC, Keita Sakuma, Santosh KC, Punyashloka Debashis, C. Gay, Jennifer Lux, Carly Rogan, Tyrone Wilson, Raphael Toku, Dominique Adams, Fen Xue, John J. Plombon, Joshua W. Kevek, Tristan A. Tronic, Scott B. Clendenning, M. Radosavljević, Masashi Miura, Shan X. Wang, Ian A. Young · 发表于：Applied Physics Reviews · 年份：2025 · DOI：10.1063/5.0251598 · 被引用次数：2 · 研究领域：Advanced Memory and Neural Computing、Ferroelectric and Negative Capacitance Devices、Magnetic properties of thin films

We present spin–orbit torque (SOT) field free magnetization switching and the detection of magnetization at room temperature using Pt and Sn alloys. Observations of the planar Hall effect and weak antilocalization provide evidence of topological features present in the PtSn4. The figures of merit of the spin-torque efficiency and spin-to-charge conversion (SCC) were estimated to be as large as 0.31 ± 0.02 and 0.47 ± 0.08, respectively, in Pt1Sn1. High SOT efficiency, large SCC signal, low magnetization switching current density, and industry compatibility for large-scale production have led to the application of PtxSn1−x alloys in magnetic memory and logic devices.