Ultra-High- k Ferroelectric BaTiO 3 Perovskite in the Gate Stack for Two-Dimensional WSe 2 p-Type High-Performance Transistors

作者：Punyashloka Debashis, Hojoon Ryu, Rachel Steinhardt, Pratyush Buragohain, John J. Plombon, K. Maxey, Kevin P. O’Brien, Raseong Kim, Arnab Sen Gupta, Carly Rogan, Jennifer Lux, I‐Cheng Tung, Dominique Adams, Melisa Ekin Gülseren, Ashish Verma Penumatcha, Shriram Shivaraman, Hai Li, Ting Zhong, Shane Harlson, Tristan A. Tronic, A. Oni, Steve Putna, Scott B. Clendenning, M. Metz, M. Radosavljević, Uygar E. Avci, Ian A. Young · 发表于：Nano Letters · 年份：2024 · DOI：10.1021/acs.nanolett.4c02069 · 被引用次数：11 · 研究领域：Electronic and Structural Properties of Oxides、Ferroelectric and Negative Capacitance Devices、Ferroelectric and Piezoelectric Materials

The experimental demonstration of a p-type 2D WSe 2 transistor with a ferroelectric perovskite BaTiO 3 gate oxide is presented. The 30 nm thick BaTiO 3 gate stack shows a robust ferroelectric hysteresis with a remanent polarization of 20 μC/cm 2 and further enables a capacitance equivalent thickness of 0.5 nm in the hybrid WSe 2 /BaTiO 3 stack due to its high dielectric constant of 323. We demonstrate one of the best ON currents for perovskite gate 2D transistors in the literature. This is enabled by high-quality epitaxial growth of BaTiO 3 and a single 2D layer transfer based fabrication method that is shown to be amenable to silicon platforms. This demonstration is an important milestone toward the integration of crystalline complex oxides with 2D channel materials for scaled CMOS and low-voltage ferroelectric logic applications.