A. Oni

机构：Intel (United States), Quality and Reliability (Greece)

发表论文 52 篇 · 总被引 1442 次 · h-index 23

代表论文

• Advancing 2D Monolayer CMOS Through Contact, Channel and Interface Engineering (2021 · 被引 116)
• Advanced Scaling of Enhancement Mode High-K Gallium Nitride-on-300mm-Si(111) Transistor and 3D Layer Transfer GaN-Silicon Finfet CMOS Integration (2021 · 被引 73)
• Gate length scaling beyond Si: Mono-layer 2D Channel FETs Robust to Short Channel Effects (2022 · 2022 International Electron Devices Meeting (IEDM) · 被引 51)
• Enhancement-Mode 300-mm GaN-on-Si(111) With Integrated Si CMOS for Future mm-Wave RF Applications (2023 · IEEE Microwave and Wireless Technology Letters · 被引 39)
• Demonstration of a Stacked CMOS Inverter at 60nm Gate Pitch with Power Via and Direct Backside Device Contacts (2023 · 被引 38)
• Silicon RibbonFET CMOS at 6nm Gate Length (2024 · 被引 36)