Advanced Scaling of Enhancement Mode High-K Gallium Nitride-on-300mm-Si(111) Transistor and 3D Layer Transfer GaN-Silicon Finfet CMOS Integration

作者：Han Wui Then, M. Radosavljević, Pratik Koirala, N. Thomas, N. Nair, Ibrahim Ban, Tushar K. Talukdar, P. Nordeen, Souvik Ghosh, Samuel James Bader, T. Hoff, Thoe K. Michaelos, R. Nahm, Michael Beumer, Nachiket Desai, P. Wallace, V. Hadagali, Heli Vora, A. Oni, X. Weng, K. Joshi, Inanc Meric, Carlos Nieva, Said Rami, P. Fischer · 年份：2021 · DOI：10.1109/iedm19574.2021.9720710 · 被引用次数：72 · 研究领域：GaN-based semiconductor devices and materials、Radio Frequency Integrated Circuit Design、Semiconductor materials and devices

We demonstrate scaling of an enhancement-mode (E-mode) high-k GaN-on-300mm Si(111) NMOS transistor achieving best-in-class performance and figure-of-merits for integrated power electronics and RF mm-wave. Here, we demonstrate many firsts and industry records for GaN-on-Si, including record fT/fMAXof 300/400GHz and transconductance$\mathrm{G}_{\mathrm{M}} > 2100 \mu\mathrm{S}/\mu \mathrm{m}$with industry thinnest$\mathrm{T}_{\text{OXE}}= 14.8 \mathrm{\AA}$; record high$\mathrm{V}_{\text{DS}}= 65\mathrm{V}$for a 30nm channel length GaN transistor with excellent$\mathrm{R}_{\text{ON}}= 495\Omega-\mu \mathrm{m}$; first truly e-mode GaN achieving full ON-current with record low-gate-drive,$\mathrm{V}_{\text{Gon}}= 1.8\mathrm{V}, \mathrm{I}_{\text{OFF}}= 25\text{pA}/\mu \mathrm{m}$at$\mathrm{V}_{\mathrm{D}}=30\mathrm{V}\ (\mathrm{V}_{\mathrm{G}}=0\mathrm{V})$; high-Q MIM and inductor enabled by GaN industry's first 4-metal layer Cu backend interconnect process on 300mm silicon; outstanding RF performance: 24dBm RF output power$(\mathrm{V}_{\mathrm{D}}= 10\mathrm{V}$and high power density 2.7W/mm at 28GHz; 17.6dBm (0.72W/mm) with$\text{PAE}=20.1\%$at 76GHz, and 0.4W/mm with 10.5% PAE and 4.3dB gain at 90GHz. All these are accomplished on a highly uniform 300mm GaN process capable of tight threshold voltage variation$(1\sigma)$of 38mV across the wafer, setting an industry milestone for GaN-on-Si. Finally, inspired by Moore's law, as we look ahead to the future of GaN transistor te...