300 mm MOCVD 2D CMOS Materials for More (Than) Moore Scaling

作者：K. Maxey, Carl H. Naylor, K. P. O'Brien, Ashish Verma Penumatcha, A. Oni, Charles C. Mokhtarzadeh, C. J. Dorow, Carly Rogan, B. Holybee, Tristan A. Tronic, Dominique Adams, N. Arefin, Arnab Sen Gupta, Charlie Lin, T. Zhong, S. Lee, A. Kitamura, Robert Bristol, Scott B. Clendenning, Uygar E. Avci, M. Metz · 发表于：2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 年份：2022 · DOI：10.1109/vlsitechnologyandcir46769.2022.9830457 · 被引用次数：36 · 研究领域：2D Materials and Applications、MXene and MAX Phase Materials、Ferroelectric and Negative Capacitance Devices

Two-dimensional (2D) materials have garnered significant attention in the past decade as a crucial enabler for "More Moore" scaling. Here we demonstrate and characterize metallo-organic chemical vapor deposition (MOCVD) of 2D materials directly on a 300 mm Si platform, including p-type WSe2for the first time. We establish process conditions for MX2(M = Mo, W; X = S, Se) targeted for both BEOL- and FEOL-application spaces. FETs fabricated on 300 mm n-type MoS2film show appreciable variability (σ/μ ~ 0.2) that in-creases with scaled geometry. Our as-deposited MOCVD WSe2pMOS devices achieve a record ION~100 μA/μm. We also exhibit advancement in patterned convertible templating (PCT) that is ultimately compatible with 300 mm technologies.