C. J. Dorow

机构：Intel (United States) · ORCID：0000-0002-1555-5987

发表论文 14 篇 · 总被引 422 次 · h-index 7

代表论文

• Process integration and future outlook of 2D transistors (2023 · Nature Communications · 被引 134)
• Advancing 2D Monolayer CMOS Through Contact, Channel and Interface Engineering (2021 · 被引 116)
• Gate length scaling beyond Si: Mono-layer 2D Channel FETs Robust to Short Channel Effects (2022 · 2022 International Electron Devices Meeting (IEDM) · 被引 51)
• 300 mm MOCVD 2D CMOS Materials for More (Than) Moore Scaling (2022 · 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 被引 36)
• Exploring manufacturability of novel 2D channel materials: 300 mm wafer-scale 2D NMOS & PMOS using MoS 2 , WS 2 , & WSe 2 (2023 · 被引 33)
• High Mobility TMD NMOS and PMOS Transistors and GAA Architecture for Ultimate CMOS Scaling (2023 · 被引 24)