Exploring manufacturability of novel 2D channel materials: 300 mm wafer-scale 2D NMOS & PMOS using MoS 2 , WS 2 , & WSe 2

作者：C. J. Dorow, T. Schram, Quentin Smets, K. P. O’Brien, K. Maxey, Charlie Lin, Luca Panarella, B. Kaczer, N. Arefin, A. Roy, R. Jordan, A. Oni, Ashish Verma Penumatcha, Carl H. Naylor, Mahmut S. Kavrik, Daire Cott, B. Graven, Valeri Afanasiev, P. Morin, Inge Asselberghs, César Javier Lockhart de la Rosa, Gouri Sankar Kar, M. Metz, Uygar E. Avci · 年份：2023 · DOI：10.1109/iedm45741.2023.10413874 · 被引用次数：33 · 研究领域：2D Materials and Applications、MXene and MAX Phase Materials、Graphene research and applications

Rapid progress in fundamental understanding and development of 2D channel materials has yielded significant advances in contact resistance, gate oxide quality, and channel mobility, revealing opportunities for the future of Moore’s Law using highly-scaled 2D CMOS. We now scale up to 300 mm, for the first time, both NMOS and PMOS 2D transistors using today’s leading TMD candidates: MoS2, WS2, and WSe2. Our MoS2outperforms WS2as NMOS transistor due to higher mobility and lower contact resistance. WSe2multi-layers show high PMOS on-currents up to 200 μA/μm for larger grain size films. Larger TMD grain sizes outperform smaller grains for both NMOS and PMOS with up to 10× higher on-currents and steeper SS, identifying single crystal mono-layer channel uniformity as a paramount obstacle toward performance enhancement and reduced variation.