High-density three-dimensional integration of dynamic random-access memory using vertical dual-gate IGZO TFTs

作者：Fuxi Liao, Zhengyong Zhu, Zihan Li, Guanhua Yang, Menggan Liu, K. Chen, Wendong Lu, Zijing Wu, Xuanming Zhang, Naide Mao, Bok-Moon Kang, Jinghong Shi, Xie-Shuai Wu, Meichen Jin, Chang Liu, Jing Zhang, Yong Yu, Guilei Wang, Congyan Lu, Jinshan Yue, Lingfei Wang, Jiawei Wang, Di Geng, Nianduan Lu, Chao Zhao, Arokia Nathan, Ling Li, Ming Liu · 发表于：Nature Communications · 年份：2025 · DOI：10.1038/s41467-025-65925-3 · 被引用次数：10 · 研究领域：Thin-Film Transistor Technologies、Transition Metal Oxide Nanomaterials、Ferroelectric and Negative Capacitance Devices

two-transistors-zero-capacitor dynamic random-access memory to further increase the storage density. The approach presented here provides a promising alternative to high-density three-dimensional dynamic random-access memory integration as a means for more efficient near memory computing for artificial intelligence systems.