Di Geng

机构：Beijing University of Posts and Telecommunications, Chinese Academy of Sciences, Chinese Academy of Engineering, Institute of Microelectronics · ORCID：0000-0002-5653-6811

发表论文 158 篇 · 总被引 2908 次 · h-index 31

代表论文

• Vertical Channel-All-Around (CAA) IGZO FET With Recessed Source/Drain Structure to Improve Contact Characteristics (2025 · IEEE Electron Device Letters · 被引 11)
• High-density three-dimensional integration of dynamic random-access memory using vertical dual-gate IGZO TFTs (2025 · Nature Communications · 被引 10)
• IGZO 2T0C DRAM With V TH Compensation Technique for Multi-Bit Applications (2025 · IEEE Journal of the Electron Devices Society · 被引 10)
• Asymmetric Contact Resistances in IGZO Vertical Channel-All-Around FETs (2025 · IEEE Electron Device Letters · 被引 6)
• TCAD Simulation Study of Cylindrical Vertical Double-Surrounding-Gate a-InGaZnO FETs and Geometric Parameter Optimization (2025 · IEEE Journal of the Electron Devices Society · 被引 6)
• A monolithic 3D IGZO-RRAM-SRAM-integrated architecture for robust and efficient compute-in-memory enabling equivalent-ideal device metrics (2025 · Science China Information Sciences · 被引 5)