Vertical Channel-All-Around (CAA) IGZO FET With Recessed Source/Drain Structure to Improve Contact Characteristics

作者：Chuanke Chen, Chen Gu, Yue Zhao, Xinlv Duan, Congyan Lu, Jiebin Niu, Kaiping Zhang, Yu Liu, Shengjie Zhao, Weiwei Li, Wanming Wu, Chunyu Zhang, Ke Hu, Shipeng Wang, Qingding Tong, Yinzhi Tang, Nianduan Lu, Di Geng, Ling Li · 发表于：IEEE Electron Device Letters · 年份：2025 · DOI：10.1109/led.2025.3563839 · 被引用次数：10 · 研究领域：Advancements in Semiconductor Devices and Circuit Design、Nanowire Synthesis and Applications、Integrated Circuits and Semiconductor Failure Analysis

We proposed recessed source/drain(S/D) structure for vertical channel-all-around (CAA) IGZO FET to introduce contact interlayer and improve its contact characteristics. The IZO interlayer introduced between S/D and IGZO helps to reduce the contact resistance, and boosting the performance of CAA IGZO FET. The fabricated CAA IGZO FETs with 8 nm IZO interlayer show an average Ion@ Vth+1V of 32.6 μA/μm, SS of 86 mV/dec, and Vthof - 0.06 V. The Schottky barrier height qϕB is extracted to be reduced from 170 meV to 65 meV by introducing the contact interlayer, which confirms the improvement of contact characteristics.