Hong Zhang

机构：China Electronic Product Reliability and Environmental Test Institute · ORCID：0009-0006-5130-5332

发表论文 35 篇 · 总被引 144 次 · h-index 7

代表论文

• Single-event burnout in β -Ga2O3 Schottky barrier diode induced by high-energy proton (2024 · Applied Physics Letters · 被引 18)
• Total Ionizing Dose Effects of β -Ga₂O₃ Schottky Barrier Diode on Different Bias Conditions (2024 · IEEE Transactions on Electron Devices · 被引 9)
• Total Ionizing Dose Responses of β-Ga₂O₃ Thin Film Solar-Blind Ultraviolet Photodetectors (2025 · IEEE Transactions on Electron Devices · 被引 8)
• Single-event burnout in β -Ga2O3 Schottky barrier diode induced by heavy ion irradiation (2025 · Applied Physics Letters · 被引 7)
• Mechanism of Heavy Ion-Induced Leakage Current Increase in Normally-OFF p-GaN Gate HEMTs (2025 · IEEE Transactions on Electron Devices · 被引 5)
• Atmospheric neutron-induced single-event burnout in β -Ga2O3 Schottky barrier diode (2025 · Applied Physics Letters · 被引 5)