Total Ionizing Dose Effects of β-Ga₂O₃ Schottky Barrier Diode on Different Bias Conditions

作者：Weili Fu, Teng Ma, Yuangang Wang, Xing Li, Zhifeng Lei, Jinbin Wang, Hongjia Song, Chao Peng, Zhangang Zhang, Hong Zhang, Liang He, Tao Xiao, Daoyou Guo, Xiangli Zhong · 发表于：IEEE Transactions on Electron Devices · 年份：2024 · DOI：10.1109/ted.2024.3505847 · 被引用次数：9 · 研究领域：Ga2O3 and related materials、Semiconductor materials and devices、GaN-based semiconductor devices and materials

This article focuses on investigating the total ionizing dose (TID) effects of$\beta $-Ga2O3-based Schottky barrier diodes (SBDs). The TID degradation behavior and mechanisms are evaluated by varying irradiation bias conditions, conducted through dc, capacitance–voltage (C–V), and low-frequency noise (LFN) measurements. At a dose of 1 Mrad(Si), the irradiated devices demonstrate a noticeable increase in both forward and reverse currents. This increase is primarily attributed to the rise in defect concentration caused by ionizing damage resulting from TID effects. The TID degradation of$\beta $-Ga2O3 SBD is significantly influenced by bias conditions, with devices under high electric fields experiencing more severe degradation. Specifically, a high reverse electric field during radiation leads to a notable increase in interface defects of$\beta $-Ga2O3 SBDs, this result was validated through TCAD simulation. The reverse bias voltage exacerbates TID effects and reduces the radiation tolerance of$\beta $-Ga2O3 SBD devices.