Atmospheric neutron-induced single-event burnout in β -Ga2O3 Schottky barrier diode

作者：Xing Li, Weibo Jiang, Xing Zeng, Yuangang Wang, Chao Peng, Hong Zhang, Xiaoning Zhang, Xi Liang, Zhangang Zhang, Zhifeng Lei, Jia‐Yue Yang, Teng Ma · 发表于：Applied Physics Letters · 年份：2025 · DOI：10.1063/5.0273065 · 被引用次数：4 · 研究领域：Ga2O3 and related materials、Electronic and Structural Properties of Oxides、Semiconductor materials and devices

This paper investigates the single-event burnout (SEB) effect of β-Ga2O3 Schottky barrier diode (SBD) under atmospheric neutron irradiation, including the degradation modes and physical mechanisms. The experimental results indicate that the reverse bias voltage (UR) is a critical factor influencing SEB failure of β-Ga2O3 SBD devices. When UR reaches 600 V, SEB failure occurs, characterized as a sudden loss of voltage-blocking capability during atmospheric neutron irradiation. The Emission Microscope and Scanning Electron Microscopy analysis reveal that SEB events occur at the edge of the Schottky junction, with the damaged area forming an approximately elliptical molten “void.” Geant 4 and TCAD simulation results show that the incidence of secondary ions, such as Cr, causes a rise in the lattice temperature inside the device, with the maximum lattice temperature increasing as UR increases. When UR is sufficiently high, the local lattice temperature reaches the melting point of the Ga2O3 material, ultimately leading to SEB failure. This study provides valuable theoretical support for Ga2O3-based power devices in aerospace applications.