Total Ionizing Dose Responses of β-Ga₂O₃ Thin Film Solar-Blind Ultraviolet Photodetectors

作者：Tao Xiao, Teng Ma, Zhifeng Lei, Weili Fu, Hong Zhang, Chao Peng, Zhangang Zhang, Hongjia Song, Zhao Fu, Daoyou Guo, Xiangli Zhong, Jinbin Wang, Xiaoping Ouyang · 发表于：IEEE Transactions on Electron Devices · 年份：2025 · DOI：10.1109/ted.2025.3534175 · 被引用次数：8 · 研究领域：Ga2O3 and related materials、Advanced Photocatalysis Techniques、Luminescence Properties of Advanced Materials

This article investigated the total ionizing dose (TID) effects on the metal-semiconductor-metal (MSM)$\beta $-Ga2O3 solar-blind ultraviolet photodetector under bias conditions through photoelectric response tests. The photocurrent and dark current of the device exhibited a notable increase after 2 Mrad(Si) TID irradiation. The TID irradiation caused a slight degradation in a photo-to-dark current ratio (PDCR). Additionally, microscopic characteristic changes and degradation mechanisms due to TID irradiation were evaluated using Raman spectroscopy, atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). The TID-induced oxygen vacancy defect in the$\beta $-Ga2O3 film increased both the photocurrent and dark current of the device. This study demonstrated the outstanding TID radiation tolerance of biased$\beta $-Ga2O3 solar-blind ultraviolet photodetectors, highlighting their significant potential for applications in the field of optoelectronics under extreme environmental conditions.