Descriptor: MOSFET Electrical Simulation Dataset (MESD)

作者：Yuhang Zhang, Kain Lu Low, Longfan Li, Leilai Shao, Yanan Sun, Jian Zhao, Yabin Sun, Yanling Shi, Yongfu Li · 发表于：IEEE data descriptions. · 年份：2024 · DOI：10.1109/ieeedata.2024.3481356 · 被引用次数：6 · 研究领域：Advancements in Semiconductor Devices and Circuit Design、Silicon Carbide Semiconductor Technologies、Semiconductor materials and devices

This article introduces the metal–oxide–semiconductor field effect transistor (MOSFET) electrical simulation dataset, MESD, an extensive collection of$I$-$V$and$C$-$V$characteristics data simulated across different foundries’ Berkeley short-channel IGFET models (BSIMs). The MESD dataset covers a range of bias voltages, temperatures, and MOSFET physical dimensions across several process technologies from 3 to 350 nm. We have detailed the design methodology used in the generation of the dataset and have outlined the structure and accessibility of the data. MESD is designed to serve as a standardized benchmark for evaluating and comparing MOSFET models, aiding semiconductor researchers and model developers in assessing the accuracy of their simulations against a robust set of controlled data.IEEE SOCIETY/COUNCILCircuits and Systems Society (CASS)DATA TYPE/LOCATIONText; Shanghai, ChinaDATA DOI/PID10.21227/wa5a-r991