Self-Heating Effects of Vertical Gate-All-Around Transistors: Analysis and Modeling

作者：Sihao Chen, Baokang Peng, Yanxin Jiao, Yu Li, Lining Zhang, Zixuan Sun, Yongkang Xue, Ming Li, Zhigang Ji, Runsheng Wang, Ru Huang · 发表于：IEEE Transactions on Electron Devices · 年份：2024 · DOI：10.1109/ted.2024.3454248 · 被引用次数：9 · 研究领域：Advancements in Semiconductor Devices and Circuit Design、Semiconductor materials and devices、Thermal properties of materials

A compact electrothermal model of vertical gate-all-around (VGAA) transistors is developed in this work. Owing to the structural asymmetry inherent in VGAA devices, the internal thermal conduction of such devices differs from that of lateral gate-all-around (LGAA) transistors. The self-heating effect (SHE) of VGAA and thermal optimization is investigated through numerical simulation, revealing a 53% decrease in the temperature rise by changing the spacer material from SiO2 to Si3N4. In addition, a physics-based thermal model with geometry dependence is demonstrated, which captures the four-stage temperature traces of VGAA and supports technology optimization. The physics-based thermal model was verified through TCAD simulation and was subsequently employed to assess the electrothermal performance at the device-circuit level.