Scaled InAlN/GaN HEMT on Sapphire With fT/fmax of 190/301 GHz

作者：Yawei He, Lian Zhang, Zhe Cheng, Chengcheng Li, Jiaheng He, Shujie Xie, Xuankun Wu, Chang Wu, Yun Zhang · 发表于：IEEE Transactions on Electron Devices · 年份：2023 · DOI：10.1109/ted.2023.3269728 · 被引用次数：27 · 研究领域：GaN-based semiconductor devices and materials、Acoustic Wave Resonator Technologies、Ga2O3 and related materials

In this brief, a scaled In$_{{0}.{17}}$Al$_{{0}.{83}}\text{N}$/GaN high-electron-mobility transistor (HEMT) was fabricated on sapphire substrate with 47-nm${T}$-gate length, 300-nm source–drain distance, and selective area regrown$\text{n}^{+}$-GaN. The device exhibits cutoff frequencies${f}_{\text {T}}/{f}_{\text {max}}$of 190/301 GHz, which gives a record sqrt (${f}_{\text {T}} \times {f}_{\text {max}}{)}$= 239 GHz among reported Ga-polar GaN-on-sapphire HEMTs. The device shows a maximum current density, a peak external direct current transconductance, and an${I}_{\text {on}}/{I}_{\text {off}}$ratio of 1.45 A/mm, 610 mS/mm, and$2.9\times 10^{6}$, respectively. Drain-induced barrier lowering of 75 mV/V is measured at${I}_{\text {ds}}$= 1 mA/mm between${V}_{\text {ds}}$= 1 V and 5 V. The three-terminal OFF-state breakdown voltage is 14.7 V. The effective electron velocity of the 2-D electron gas (2DEG) under the gate foot is estimated to be$1.4\times 10^{7}$cm/s. These characteristics of this Ga-polar millimeter wave (mm-wave) GaN-on-sapphire HEMT are comparable with those state-of-the-art counterparts on SiC substrates.