Zhe Cheng

机构：Institute of Semiconductors, China Southern Power Grid (China), Colorado State University · ORCID：0000-0002-9127-241X

发表论文 62 篇 · 总被引 457 次 · h-index 13

代表论文

• Ultra-scaled GaN HEMTs on Sapphire with fT/fmax = 229/528 GHz and NFmin ~ 1 dB (2024 · 被引 7)
• Achieving Ultralow Specific Contact Resistivity in Ti/n + -GaN Ohmic Contacts by Mitigating the FLP Effect with a Gallium Oxide Interlayer (2025 · ACS Applied Electronic Materials · 被引 6)
• Deep-ultraviolet LEDs with an Al-graded p-AlGaN layer exhibiting high wall-plug efficiency and high modulation bandwidth simultaneously (2024 · Semiconductor Science and Technology · 被引 6)
• Mechanistic insights into oxygen reduction reaction on metal/perovskite catalysts: Interfacial interactions and reaction pathways (2025 · Solid State Ionics · 被引 5)
• AlGaN/GaN Heterojunction Bipolar Transistors With Record fᴛ/fₘₐₓ=21.6 /4.23 GHz (2025 · IEEE Electron Device Letters · 被引 3)
• Advanced Down-Scaling Technology and its Physical Mechanism for mm-Wave/ Terahertz GaN HEMTs with High Frequency, Low Noise, and High JFoM (2024 · 被引 2)