Yun Zhang

机构：Institute of Semiconductors · ORCID：0000-0002-6361-7193

发表论文 152 篇 · 总被引 2738 次 · h-index 25

代表论文

• Scaled InAlN/GaN HEMT on Sapphire With f T /f max of 190/301 GHz (2023 · IEEE Transactions on Electron Devices · 被引 26)
• Acoustofluidics-enhanced biosensing with simultaneously high sensitivity and speed (2024 · Microsystems & Nanoengineering · 被引 17)
• 3-Hydroxypropionaldehyde modulates tryptophan metabolism to activate AhR signaling and alleviate ethanol-induced liver injury (2025 · Phytomedicine · 被引 8)
• High-performance GaN HEMTs with GaON under-gate cap layer via barrier-friendly selective plasma oxidation (2025 · Applied Physics Letters · 被引 7)
• Ultra-scaled GaN HEMTs on Sapphire with fT/fmax = 229/528 GHz and NFmin ~ 1 dB (2024 · 被引 7)
• Achieving Ultralow Specific Contact Resistivity in Ti/n + -GaN Ohmic Contacts by Mitigating the FLP Effect with a Gallium Oxide Interlayer (2025 · ACS Applied Electronic Materials · 被引 6)