Hybrid 1T e-DRAM and e-NVM Realized in One 10 nm node Ferro FinFET device with Charge Trapping and Domain Switching Effects

作者：Qing Luo, Tiancheng Gong, Yan Cheng, Qingzhu Zhang, Haoran Yu, Jie Yu, Haili Ma, Xiaoxin Xu, Shijie Huang, Xi Zhu, Danian Dona, Jiahao Yin, Peng Yuan, Lu Tai, Jianfeng Gao, Junfeng Li, Huaxiang Yin, Shibing Long, Qi Liu, Hangbing Lv, Ming Liu · 年份：2018 · DOI：10.1109/iedm.2018.8614650 · 被引用次数：47 · 研究领域：Semiconductor materials and devices、Ferroelectric and Negative Capacitance Devices、Advancements in Semiconductor Devices and Circuit Design

For the first time, we experimentally demonstrated a 10nm node HfZrO based FE-FinFET device with both Charge Trapping and Domain Switching memory effect. Extreme high endurance (> 1012), high operation speed (4@85C), low operation voltage (10 years) and read disturbance immunity were achieved, showing great potential for e-NVM application.