Shijie Huang

机构：Shanghai University of Electric Power, Shanghai Ocean University · ORCID：0000-0003-4519-7364

发表论文 20 篇 · 总被引 443 次 · h-index 9

代表论文

• Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for 2T0C-DRAM With High Density Beyond 4F 2 by Monolithic Stacking (2022 · IEEE Transactions on Electron Devices · 被引 183)
• Hybrid 1T e-DRAM and e-NVM Realized in One 10 nm node Ferro FinFET device with Charge Trapping and Domain Switching Effects (2018 · 被引 48)
• A New Surface Potential and Physics Based Compact Model for a-IGZO TFTs at Multinanoscale for High Retention and Low-Power DRAM Application (2021 · 被引 47)
• Scaling Dual-Gate Ultra-thin a-IGZO FET to 30 nm Channel Length with Record-high G m,max of 559 µS/µm at V DS =1 V, Record-low DIBL of 10 mV/V and Nearly Ideal SS of 63 mV/dec (2022 · 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 被引 40)
• Investigation of Asymmetric Characteristics of Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O Field Effect Transistors (2022 · IEEE Electron Device Letters · 被引 35)
• Geometric Variability Aware Quantum Potential based Quasi-ballistic Compact Model for Stacked 6 nm-Thick Silicon Nanosheet GAA-FETs (2021 · 被引 21)