Jun Yuan

机构：Integrated Device Technology (United States), Northern Jiangsu People's Hospital, Huazhong University of Science and Technology, Yangzhou University

发表论文 18 篇 · 总被引 63 次 · h-index 5

代表论文

• A Trench and Field Limiting Rings Co-Assisted JTE Termination With N-P-N Sandwich Epitaxial Wafers for 4H-SiC Devices (2024 · IEEE Electron Device Letters · 被引 13)
• Clinical significance of hemoglobin level and blood transfusion therapy in elderly sepsis patients: A retrospective analysis (2023 · The American Journal of Emergency Medicine · 被引 12)
• Design and Fabrication of a Novel 1200 V 4H-SiC Trench MOSFET With Periodically Grounded Trench Bottom Shielding (2025 · IEEE Transactions on Electron Devices · 被引 9)
• A Novel SiC Trench MOSFET with Unilateral P Buried Layer for Improved Oxide Electric Field and Switching Loss (2023 · 被引 7)
• Demonstration of a 1200V Periodic Full-P Encapsulated 4H-SiC Trench MOSFET (2023 · 被引 7)
• A Modeling Method of Reverse Biased Electric Field for JBS Diodes Based on Schwarz-Christoffel Transformation (2025 · IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems · 被引 4)