Chengxi Ding

机构：Fudan University, Robotics Research (United States)

发表论文 14 篇 · 总被引 88 次 · h-index 6

代表论文

• Improving interfacial thermal conductivity by constructing covalent bond between Ga₂O₃ and SiC (2025 · Nature Communications · 被引 15)
• High-Breakdown and Low-Leakage 4H-SiC MOS Capacitor Based on HfO2/SiO2 Stacked Gate Dielectric in Trench Structures (2025 · Nanomaterials · 被引 15)
• Band Alignment, Thermal Transport Property, and Electrical Performance of High-Quality β-Ga 2 O 3 /AlN Schottky Barrier Diode Grown via MOCVD (2025 · ACS Applied Materials & Interfaces · 被引 13)
• Mechanism study of low-resistance ohmic contact in Cr/Au electrodes on (100) β-Ga2O3 substrate with rapid thermal annealing (2024 · Applied Surface Science · 被引 13)
• Study of ZrO2 Gate Dielectric with Thin SiO2 Interfacial Layer in 4H-SiC Trench MOS Capacitors (2025 · Materials · 被引 10)
• Evaluation of AlN insertion layer on the properties of heterogeneous integrated Ga2O3 films on sapphire (2024 · Journal of Crystal Growth · 被引 8)