Evaluation of AlN insertion layer on the properties of heterogeneous integrated Ga2O3 films on sapphire

作者：Anfeng Wang, Ming-Qian Yuan, Yun-Duo Guo, Lin Gu, Yi Shen, Chengxi Ding, Xuejun Yan, Qing‐Chun Zhang, Li Zhang, Xiaodong Zhang, Hongping Ma · 发表于：Journal of Crystal Growth · 年份：2024 · DOI：10.1016/j.jcrysgro.2024.127977 · 被引用次数：8 · 研究领域：Ga2O3 and related materials、ZnO doping and properties、Advanced Photocatalysis Techniques