Mowen Zhang

机构：China Electronic Product Reliability and Environmental Test Institute

发表论文 8 篇 · 总被引 70 次 · h-index 4

代表论文

• Degradation Evaluation and Defects Analysis for 1.2-kV Planar-Gate SiC MOSFETs Under Repetitive Surge Current Stress (2023 · IEEE Transactions on Electron Devices · 被引 26)
• Effects of 300-MeV Proton Irradiation on Electrical Properties of β -Ga 2 O 3 Schottky Barrier Diodes (2024 · IEEE Transactions on Electron Devices · 被引 22)
• Magnetically Oriented 3D-Boron Nitride Nanobars Enable Efficient Heat Dissipation for 3D-Integrated Power Packaging (2023 · ACS Applied Nano Materials · 被引 15)
• Temperature Sensitivity of Vertical Ga₂O₃ Junction Barrier Schottky Diode Using the p-NiO/n-Ga₂O₃ Heterojunction (2025 · IEEE Sensors Journal · 被引 5)
• Comparative Investigation on Device-Level Failure of Three Typical SiC MOSFETs Under Single Surge Current Stress (2026 · IEEE Transactions on Power Electronics · 被引 1)
• Degradation Analysis of Double Trench-Gate SiC MOSFETs Under Single Surge Current Stress (2024 · 被引 1)