Comparative Investigation on Device-Level Failure of Three Typical SiC MOSFETs Under Single Surge Current Stress

作者：Liang He, Mowen Zhang, Chao Li, Hao Niu, Y Shi, Xinghuan Chen, Shuanzhu Fang, Zi Wang, Yuan Chen · 发表于：IEEE Transactions on Power Electronics · 年份：2026 · DOI：10.1109/tpel.2026.3706282 · 被引用次数：1 · 研究领域：Silicon Carbide Semiconductor Technologies、Semiconductor materials and devices、Advancements in Semiconductor Devices and Circuit Design