Degradation Analysis of Double Trench-Gate SiC MOSFETs Under Single Surge Current Stress

作者：Mowen Zhang, Qijun Wen, Liang He, Dezhi Ma, Shuanzhu Fang, Zhizheng Wang, Zhiyuan He, Jia‐Yue Yang, Yiqiang Chen · 年份：2024 · DOI：10.1109/icept63120.2024.10668775 · 被引用次数：1 · 研究领域：Silicon Carbide Semiconductor Technologies、Semiconductor materials and devices、Advancements in Semiconductor Devices and Circuit Design

In this work, the degradation processes and mechanisms of commercial double trench gate SiC MOSFETs under single surge current (SSC) stresses are delved into. Based on comprehensive characterizations on device parameters before/after SSC stresses, we elucidate degradation behaviors exhibited by these MOSFETs. Notably, when SSC reaches the maximum value, the stability of the threshold voltage (Vth) and on-state resistance ($R$ds,on) suggests that the gate oxide for these MOSFETs is not obviously influenced by SSC stresses. Additionally, scanning acoustic microscopy (SAM) analysis confirm the reliability of package. Through directly measuring the I-V characteristics of the body diode, the damage to body diode is identified as the primary cause of device failure, resulting the increase of the drain leakage current (Idss) and the loss in blocking capability. This work contributes usefully to the refinement of surge reliability assessment for SiC MOSFETs.