Xinpei Duan

机构：Hunan University, China Electronics Technology Group Corporation, Ministry of Industry and Information Technology · ORCID：0000-0003-1543-324X

发表论文 26 篇 · 总被引 423 次 · h-index 10

代表论文

• Molybdenum disulfide transistors with enlarged van der Waals gaps at their dielectric interface via oxygen accumulation (2022 · Nature Electronics · 被引 182)
• Amorphous B-doped graphitic carbon nitride quantum dots with high photoluminescence quantum yield of near 90% and their sensitive detection of Fe2+/Cd2+ (2021 · Science China Materials · 被引 35)
• Electrically Dynamic Configurable WSe 2 Transistor and the Applications in Photodetector (2023 · Advanced Functional Materials · 被引 28)
• Ultra‐Steep‐Slope High‐Gain MoS 2 Transistors with Atomic Threshold‐Switching Gate (2022 · Advanced Science · 被引 26)
• Schottky-Contacted WSe 2 Hot-Electron Photodetectors with Fast Response and High Sensitivity (2021 · ACS Photonics · 被引 25)
• The Mechanism of Performance Variations in MoS 2 Vertical Schottky Metal–Semiconductor Photodiode Based on Thermionic Emission Theory (2022 · IEEE Transactions on Electron Devices · 被引 15)