Molybdenum disulfide transistors with enlarged van der Waals gaps at their dielectric interface via oxygen accumulation

作者：Pengfei Luo, Chang Liu, Jun Lin, Xinpei Duan, Wujun Zhang, Chao Ma, Yawei Lv, Xuming Zou, Yuan Liu, Frank Schwierz, Wenjing Qin, Lei Liao, Jun He, Xingqiang Liu · 发表于：Nature Electronics · 年份：2022 · DOI：10.1038/s41928-022-00877-w · 被引用次数：182 · 研究领域：2D Materials and Applications、Ferroelectric and Negative Capacitance Devices、MXene and MAX Phase Materials