Ultra‐Steep‐Slope High‐Gain MoS 2 Transistors with Atomic Threshold‐Switching Gate

作者：Jun Lin, Xiaozhang Chen, Xinpei Duan, YU Zhi-ming, Wencheng Niu, Mingliang Zhang, Chang Liu, Guoli Li, Yuan Liu, Xingqiang Liu, Peng Zhou, Lei Liao · 发表于：Advanced Science · 年份：2022 · DOI：10.1002/advs.202104439 · 被引用次数：26 · 研究领域：Advancements in Semiconductor Devices and Circuit Design、Ferroelectric and Negative Capacitance Devices、Nanowire Synthesis and Applications

Abstract The fundamental Boltzmann limitation dictates the ultimate limit of subthreshold swing (SS) to be 60 mV dec −1 , which prevents the continued scaling of supply voltage. With atomically thin body, 2D semiconductors provide new possibilities for advanced low‐power electronics. Herein, ultra‐steep‐slope MoS 2 resistive‐gate field‐effect transistors (RG‐FETs) by integrating atomic‐scale‐resistive filamentary with conventional MoS 2 transistors, demonstrating an ultra‐low SS below 1 mV dec −1 at room temperature are reported. The abrupt resistance transition of the nanoscale‐resistive filamentary ensures dramatic change in gate potential, and switches the device on and off, leading to ultra‐steep SS. Simultaneously, RG‐FETs demonstrate a high on/off ratio of 2.76 × 10 7 with superior reproducibility and reliability. With the ultra‐steep SS, the RG‐FETs can be readily employed to construct logic inverter with an ultra‐high gain ≈2000, indicating exciting potential for future low‐power electronics and monolithic integration.